2-dimensional InGaAs/InP photodiode arrays on semi-insulating InP for laser radar and dark current characteristics

Author

Nam, Eun Soo ; Kim, H.S. ; Oh, M.S. ; Hong, Sun Eui ; Yong Won Kim ; Cheong, Hai Doo ; Kim, B.W.

Author_Institution

Dept. of High Speed SoC Res., Electron. & Telecommun. Res. Inst., Daejeon, South Korea

Volume

5

fYear

2005

fDate

4-7 Dec. 2005

Abstract

Two dimensional InGaAs/InP PIN photodiode array on semi-insulating InP has been developed for the image sensing of the eye safe laser radar in the 1.55 μm wavelength range of the spectrum with high bandwidth and large area. The fabrication and dark current characteristics are discussed. Dark current characteristic is limited by the diffusion and generation-recombination in the 2 dimensional InGaAs/InP photodiode arrays on semi-insulating InP. The static dark current of the InGaAs/InP PIN photodiode arrays increases as proportional to the number of the pixels in the array.

Keywords

III-V semiconductors; dark conductivity; gallium arsenide; indium compounds; optical radar; p-i-n photodiodes; 1.55 micron; 2D PIN photodiode arrays; InGaAs-InP; eye safe laser radar; image sensing; static dark current; Bandwidth; Character generation; Dark current; Indium gallium arsenide; Indium phosphide; Laser radar; Optical arrays; Optical device fabrication; PIN photodiodes; Radar imaging;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings

Print_ISBN

0-7803-9433-X

Type

conf

DOI

10.1109/APMC.2005.1607053

Filename

1607053