Title :
2-dimensional InGaAs/InP photodiode arrays on semi-insulating InP for laser radar and dark current characteristics
Author :
Nam, Eun Soo ; Kim, H.S. ; Oh, M.S. ; Hong, Sun Eui ; Yong Won Kim ; Cheong, Hai Doo ; Kim, B.W.
Author_Institution :
Dept. of High Speed SoC Res., Electron. & Telecommun. Res. Inst., Daejeon, South Korea
Abstract :
Two dimensional InGaAs/InP PIN photodiode array on semi-insulating InP has been developed for the image sensing of the eye safe laser radar in the 1.55 μm wavelength range of the spectrum with high bandwidth and large area. The fabrication and dark current characteristics are discussed. Dark current characteristic is limited by the diffusion and generation-recombination in the 2 dimensional InGaAs/InP photodiode arrays on semi-insulating InP. The static dark current of the InGaAs/InP PIN photodiode arrays increases as proportional to the number of the pixels in the array.
Keywords :
III-V semiconductors; dark conductivity; gallium arsenide; indium compounds; optical radar; p-i-n photodiodes; 1.55 micron; 2D PIN photodiode arrays; InGaAs-InP; eye safe laser radar; image sensing; static dark current; Bandwidth; Character generation; Dark current; Indium gallium arsenide; Indium phosphide; Laser radar; Optical arrays; Optical device fabrication; PIN photodiodes; Radar imaging;
Conference_Titel :
Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings
Print_ISBN :
0-7803-9433-X
DOI :
10.1109/APMC.2005.1607053
