DocumentCode :
3416938
Title :
Transient analysis of 3.3kV double-side double-gate IGBTs
Author :
Hobart, K.D. ; Kub, F.J. ; Ancona, Mario ; Neilson, J.M. ; Waind, P.R.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
fYear :
2004
fDate :
24-27 May 2004
Firstpage :
273
Lastpage :
276
Abstract :
The transient behavior of double-side, double-gate IGBTs (DIGBTs) is presented. Devices fabricated with and without n-buffer layers are compared to conventional IGBTs. Both DIGBT designs show improved EOFF and VCE,ON compared with the 3.3 kV IGBTs. The improvement in VCE,ON is 35% and 46% for devices with and without n-buffer layers, respectively, compared to conventional IGBTs. Improvement in turn-off loss is nearly 80%, achieving EOFF as low as 9 mJ turning off 50 A at 1800 V.
Keywords :
insulated gate bipolar transistors; power transistors; transient response; 1800 V; 3.3 kV; 50 A; 9 mJ; DIGBT; IGBT transient analysis; double-gate IGBT; double-side IGBT; n-buffer layers; turn-off loss; Insulated gate bipolar transistors; Power transistors; Transient response;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on
Print_ISBN :
4-88686-060-5
Type :
conf
DOI :
10.1109/ISPSD.2004.1332918
Filename :
1332918
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3416938
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