DocumentCode :
3417015
Title :
Low voltage low power CMOS design techniques for deep submicron ICs
Author :
Wei, Liqiong ; Roy, Kaushik ; De, Vivek K.
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
fYear :
2000
fDate :
2000
Firstpage :
24
Lastpage :
29
Abstract :
Due to the quadratic reduction in the switching power dissipation, lowering supply voltage is obviously one of the most effective ways to reduce power consumption. However, the performance will degrade. In order to satisfy the high performance requirements, threshold voltage has to be scaled. Unfortunately, such scaling leads to a dramatic increase in leakage current, which becomes a new concern for low voltage and high performance circuit designs. Multiple transistor threshold and supply voltages can be used to achieve low power and high performance while maintaining low leakage current. In this tutorial, different multiple-Vth, multiple-Vdd and standby leakage control techniques are presented
Keywords :
CMOS integrated circuits; VLSI; integrated circuit design; leakage currents; low-power electronics; LV low power CMOS design techniques; deep submicron ICs; high performance requirements; low leakage current; low voltage CMOS design; multiple supply voltage techniques; multiple transistor threshold techniques; standby leakage control techniques; supply voltage reduction; switching power dissipation reduction; threshold voltage scaling; CMOS technology; Circuit synthesis; Degradation; Energy consumption; Leakage current; Low voltage; Power dissipation; Subthreshold current; Threshold voltage; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Design, 2000. Thirteenth International Conference on
Conference_Location :
Calcutta
ISSN :
1063-9667
Print_ISBN :
0-7695-0487-6
Type :
conf
DOI :
10.1109/ICVD.2000.812579
Filename :
812579
Link To Document :
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