A novel electro-thermal simulation approach of power IGBT modules for automotive traction applications

Author

Kojima, Takashi ; Yamada, Yasushi ; Ciappa, Mauro ; Chiavarini, Marco ; Fichtner, Wolfgang

Author_Institution

Toyota Central R&D Labs. Inc., Aichi, Japan

fYear

2004

fDate

24-27 May 2004

Firstpage

289

Lastpage

292

Abstract

In this paper, a novel thermal compact model of IGBT power modules for automotive applications is proposed. This new technique combines the accuracy of the FEM approach with the fast computational performances of circuit simulators. Furthermore, a simple parameter definition method for power device models, which enables us to change the device characteristics dynamically, is introduced. These methods provide an excellent tool to investigate issues such as the temperature non-homogeneity in parallel-connected devices.

Keywords

automotive electronics; circuit simulation; finite element analysis; insulated gate bipolar transistors; modules; power transistors; semiconductor device models; FEM; automotive traction applications; circuit simulators; electro-thermal simulation; parallel-connected devices temperature nonhomogeneity; parameter definition method; power IGBT modules; power device models; thermal compact model; Finite element methods; Insulated gate bipolar transistors; Power transistors; Road vehicle electronics; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on

Print_ISBN

4-88686-060-5

Type

conf

DOI

10.1109/ISPSD.2004.1332922

Filename

1332922