High-voltage 4H-SiC PiN rectifiers with single-implant, multi-zone JTE termination

Author

Losee, P.A. ; Balachandran, S.K. ; Zhu, L. ; Li, C. ; Seiler, J. ; Chow, T.P. ; Bhat, I.B. ; Gutmann, R.J.

Author_Institution

Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA

fYear

2004

fDate

24-27 May 2004

Firstpage

301

Lastpage

304

Abstract

A novel multi-zone junction termination extension (MZJTE) is presented for high-voltage 4H-SiC pin junction rectifiers. Unlike the conventional multi-implantation or SiC etching approaches, our new termination technique utilizes multiple masking oxide etching steps to achieve a single-implant MZJTE structure that maintains surface planarity. Numerical device simulations have been performed to examine the process sensitivities, compared to single-zone JTE, and yielded breakdown voltages close to 90% of the ideal parallel-plane breakdown voltage. High voltage (V_BR≈8 kV) rectifiers were fabricated and experimental characteristics have been measured.

Keywords

etching; p-i-n diodes; power semiconductor diodes; semiconductor device breakdown; silicon compounds; solid-state rectifiers; wide band gap semiconductors; 5 V; 8 kV; SiC; high-voltage 4H-SiC PiN rectifiers; masking oxide etching; multiple-zone JTE termination; multiple-zone junction termination extension; parallel-plane breakdown voltage; pin junction rectifiers; single-implant JTE termination; single-implant MZJTE structure; surface planarity; Etching; Power semiconductor diodes; Silicon compounds; Solid state rectifiers; p-i-n diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on

Print_ISBN

4-88686-060-5

Type

conf

DOI

10.1109/ISPSD.2004.1332925

Filename

1332925