• DocumentCode
    3417080
  • Title

    A novel ultra high voltage 4H-SiC bipolar device: MAGBT

  • Author

    Asano, K. ; Sugawara, Y. ; Nakayama, K.

  • Author_Institution
    Power Eng. R&D Center, Kansai Electr. Power Co., Amagasaki, Japan
  • fYear
    2004
  • fDate
    24-27 May 2004
  • Firstpage
    305
  • Lastpage
    308
  • Abstract
    A novel normally-off SiC MOS accumulated channel gate bipolar transistor, called MAGBT, with a high blocking voltage is proposed for high voltage applications. This MAGBT can be expected to realize a high blocking voltage and a low on-state voltage drop. Even if the blocking voltage is greater than 20 kV, the on-state voltage drop at 100 A/cm2 can be expected to be less than 6.5 V. Furthermore, high safety against latch up can be expected.
  • Keywords
    power bipolar transistors; silicon compounds; wide band gap semiconductors; 20 kV; 4H-SiC bipolar device; 6.5 V; MOS accumulated channel gate bipolar transistor; SiC; high blocking voltage device; high voltage applications; latch up immunity; low on-state voltage drop; normally-off MAGBT; ultra high voltage MAGBT; Power bipolar transistors; Silicon compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on
  • Print_ISBN
    4-88686-060-5
  • Type

    conf

  • DOI
    10.1109/ISPSD.2004.1332926
  • Filename
    1332926
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3417080