• DocumentCode
    3417086
  • Title

    A double channel normally-off SiC JFET device with ultra-low on-state resistance

  • Author

    Udrea, F. ; Mihaila, A. ; Rashid, S.J. ; Amaratunga, G.A.J. ; Takeuchi, Y. ; Kataoka, M. ; Malhan, R.K.

  • Author_Institution
    Dept. of Eng., Cambridge Univ., UK
  • fYear
    2004
  • fDate
    24-27 May 2004
  • Firstpage
    309
  • Lastpage
    312
  • Abstract
    In this paper we report a novel ´all-epitaxial´ 1.2 kV normally-off JFET featuring a double channel to improve considerably the specific on-state resistance. The device relies on a succession of n and p+ stripes in the channel/gate region. A 30% reduction in the on-resistance is obtained when compared to a standard single channel normally-off JFET. Depending on the structure considered, the unipolar value of the specific on-state resistance for a 1.2 kV device is below 3 mΩcm2.
  • Keywords
    junction gate field effect transistors; power field effect transistors; 1.2 kV; SiC; all-epitaxial JFET; channel/gate region n/p+ stripes; double channel normally-off JFET; specific on-state resistance; ultra-low on-state resistance; unipolar resistance value; JFETs; Power FETs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on
  • Print_ISBN
    4-88686-060-5
  • Type

    conf

  • DOI
    10.1109/ISPSD.2004.1332927
  • Filename
    1332927
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3417086