DocumentCode
3417087
Title
A low power 900 MHz register file (8 ports, 32 words×64 bits) in 1.8 V, 0.25 μm SOI technology
Author
Joshi, R.V. ; Hwang, W. ; Wilson, S. ; Shahidi, G. ; Chuang, C.T.
Author_Institution
Res. Div., IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fYear
2000
fDate
2000
Firstpage
44
Lastpage
49
Abstract
This paper shows full functionality of a low power 900 MHz dynamic register file (6 Read and 2 Write ports, 32 wordlines×64 bitlines). Such a register file is designed for bulk silicon technology but is fabricated in 0.25 μm Silicon on Insulator (SOI) technology without any body contacts. This paper also proposes a new method to extract the performance gain (which is limited by the tester speed) of a register file in bulk and SOI technology based on internal picoprobe measurements along the critical path. Based on the hardware and simulation data the register file is capable of functioning at 900 MHz for read and write operations in a single cycle. The register file can even function above 1 GHz for read operation. A power reduction of 8-12% is realized for SOI over bulk technology especially at higher frequencies
Keywords
CMOS logic circuits; integrated circuit measurement; low-power electronics; silicon-on-insulator; 0.25 micron; 1.8 V; 64 bit; 900 MHz; SOI technology; Si; dynamic register file; internal picoprobe measurements; low power register file; performance gain extraction; power reduction; read operations; write operations; Capacitance; Decoding; Delay effects; Frequency; Hardware; Power generation; Registers; Testing; Threshold voltage; Timing;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Design, 2000. Thirteenth International Conference on
Conference_Location
Calcutta
ISSN
1063-9667
Print_ISBN
0-7695-0487-6
Type
conf
DOI
10.1109/ICVD.2000.812583
Filename
812583
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