ZnO nanorod array based optoelectronic device with graphene as transparent electrode

Author

Ting-Ting Feng ; Dan Xie ; Hai-Ming Zhao ; Tian-Ling Ren

Author_Institution

Tsinghua Nat. Lab. for Inf. Sci. & Technol. (TNList), Tsinghua Univ., Beijing, China

fYear

2012

fDate

Oct. 29 2012-Nov. 1 2012

Firstpage

1

Lastpage

3

Abstract

The ZnO nanorod array (ZNA) for optoelectronic device application was prepared by hydrothermal method with Zn film as the seed layer. Large area graphene film was synthesized by chemical vapor deposition method and shows good transparency and conductivity, which is very suitable for the application of transparent conductive electrode (TCE). The graphene/ZNA/silicon device was fabricated and the photoelectrical characteristics were studied, demonstrating the feasibility of graphene used as TCE in ZNA based optoelectronic devices.

Keywords

chemical vapour deposition; graphene; nanorods; optoelectronic devices; silicon; zinc compounds; TCE; chemical vapor deposition method; graphene-ZNA-silicon device; hydrothermal method; large-area graphene film; optoelectronic device; photoelectrical characteristics; transparent conductive electrode; zinc film; zinc oxide nanorod array; Electrodes; Films; Graphene; Optoelectronic devices; Silicon; Substrates; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on

Conference_Location

Xi´an

Print_ISBN

978-1-4673-2474-8

Type

conf

DOI

10.1109/ICSICT.2012.6467683

Filename

6467683