Title :
Device degradation in n- and p-channel polysilicon TFTs as a function of different electrical stress configurations
Author :
Suntharalingam, Vyshnavi ; Fonash, Stephen J. ; Awadelkarim, Osama O.
Author_Institution :
Electron. Mater. & Processing Res. Lab., Pennsylvania State Univ., University Park, PA, USA
Abstract :
Electrical stress testing of polysilicon TFTs is a very valuable tool for addressing concerns about device reliability and stability. We have examined two distinct bias stresses on ECR and RF hydrogenated polysilicon TFTs and have compared the degradation mechanisms in n- and p-channel devices. We present evidence that hydrogen motion can play a role in TFT response to these stresses and show that the response can be very different for n- and p-channel TFTs
Keywords :
crystal defects; elemental semiconductors; hot carriers; hydrogen; plasma applications; plasma radiofrequency heating; semiconductor device reliability; semiconductor device testing; semiconductor doping; semiconductor technology; silicon; thin film transistors; ECR; RF hydrogenated polysilicon TFT; Si:H; TFT response; bias stress; device degradation; electrical stress; hydrogen motion; n-channel polysilicon TFT; p-channel polysilicon TFT; reliability; stability; testing; Degradation; Dielectric devices; Hot carriers; Hydrogen; Laboratories; Radio frequency; Silicon; Stress; Thin film transistors; Threshold voltage;
Conference_Titel :
Active Matrix Liquid Crystal Displays, 1995. AMLCDs '95., Second International Workshop on
Conference_Location :
Bethlehem, PA
Print_ISBN :
0-7803-3056-0
DOI :
10.1109/AMLCD.1995.540971
