Title :
A new vertical GaN Schottky barrier diode with floating metal ring for high breakdown voltage
Author :
Lee, Seung-Chul ; Her, Jin-Cherl ; Kim, Soo-Seong ; Ha, Min-Woo ; Seo, Kwang-Seok ; Choi, Yeam-Ik ; Han, Min-Koo
Author_Institution :
Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
Abstract :
A vertical GaN Schottky barrier diode (SBD) employing a floating metal ring as an edge termination is described. The breakdown voltage is larger than a device without any termination that has been fabricated on a bulk GaN substrate. Fabricated GaN SBD exhibits a high breakdown voltage of 353 V and very fast reverse recovery characteristics of 28 ns. The breakdown voltage of a device without termination is 159 V. It should be noted that the proposed device does not require any additional processes.
Keywords :
III-V semiconductors; Schottky diodes; gallium compounds; power semiconductor diodes; semiconductor device breakdown; wide band gap semiconductors; 159 V; 28 ns; 353 V; GaN; SBD; buck DC-DC converter; edge termination; floating metal ring; high breakdown voltage; reduced electric field concentration; vertical Schottky barrier diode; very fast reverse recovery; Gallium compounds; Power semiconductor diodes; Schottky diodes;
Conference_Titel :
Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on
Print_ISBN :
4-88686-060-5
DOI :
10.1109/ISPSD.2004.1332930
