DocumentCode
3417149
Title
A new GaN based field effect Schottky barrier diode with a very low on-voltage operation
Author
Yoshida, Seikoh ; Ikeda, Nariaki ; Li, Jiang ; Wada, Takahiro ; Takehara, Hironari
Author_Institution
Yokohama R&D Labs., Furukawa Electr. Co. Ltd, Yokohama, Japan
fYear
2004
fDate
24-27 May 2004
Firstpage
323
Lastpage
326
Abstract
We first demonstrated a new structure of GaN Schottky diode, with dual Schottky structures. That is, a field effect Schottky barrier diode (FESBD) was fabricated. The purpose of this diode was to lower the on-state voltage and to maintain a high reverse breakdown voltage. This diode was fabricated using an AlGaN/GaN heterojunction and a selective area growth (SAG) technique. We obtained an on-state voltage below 0.1 V, using a vertical type FESBD and the breakdown voltage was over 400 V using a planar type FESBD.
Keywords
Schottky diodes; field effect devices; power semiconductor diodes; semiconductor device breakdown; 0.1 V; 400 V; AlGaN-GaN; SAG; dual Schottky structures; field effect Schottky barrier diode; heterojunction structure; high reverse breakdown voltage; low on-voltage operation; planar type FESBD; selective area growth technique; vertical type FESBD; Power semiconductor diodes; Schottky diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on
Print_ISBN
4-88686-060-5
Type
conf
DOI
10.1109/ISPSD.2004.1332931
Filename
1332931
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