Title :
A 3.6-μW sub-lV fast-transient-response output-capacitor-free LDO regulator in 0.13-μm CMOS technology
Author :
Xi Qu ; Ze-kun Zhou ; Xin Ming ; Bo Zhang
Author_Institution :
State key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
A sub-1V output capacitor-free CMOS low-dropout regulator, which can realize fast transient behavior with low power dissipation, is presented in this paper. The proposed LDO regulator utilizes class AB operational amplifier to increase the slew rate at the gate of power PMOS transistor during transient state. An extra slew rate enhancement circuit is adopted to deliver extra current when the output voltage increases suddenly with automatic shut-off property. The proposed LDO regulator has been designed and simulated in a standard 0.13-μm CMOS process. The LDO regulator can deliver 100mA load current at 0.9V input voltage with 200mV dropout voltage. The output voltage is able to recover within 1.6μs at 4 μA quiescent current, when the output current steps from 50μA to 100mA.
Keywords :
CMOS analogue integrated circuits; capacitors; CMOS technology; current 50 A to 100 mA; extra slew rate enhancement circuit; output; power 3.6 W; power PMOS transistor; power dissipation; size 0.13 mum; sub lV fast-transient-response output-capacitor-free LDO regulator; time 1.6 s; transient state; voltage 0.9 V; voltage 200 mV; Capacitors; Logic gates; Operational amplifiers; Regulators; Transient analysis; Transient response; Voltage control;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467696
