Title :
Microwave class-F power amplifier design including input harmonic terminations
Author :
Gao, S. ; Butterworth, P. ; Ooi, S. ; Sambel, A.
Author_Institution :
Sch. of Comput., Eng. & Inf. Sci., Northumbria Univ., Newcastle, UK
Abstract :
In this paper, we present the design of a high-efficiency class-F power amplifier in pHEMT technology using a novel load-pull/source-pull simulation-based approach. The 2nd harmonic input termination is shown to have a critical influence on PA performances, which is justified by the shape of the simulated waveforms. Experimental validation is carried out on a 2 GHz practical circuit using a medium-power packaged device. Two cases are compared both theoretically and experimentally: for the best and worst case 2nd harmonic input terminations, 76% and 42% saturated PAE are measured, respectively. The worst case termination degrades the saturated C/I3 by 7.5 dB.
Keywords :
HEMT integrated circuits; harmonics; integrated circuit design; microwave power amplifiers; 2 GHz; input harmonic terminations; load-pull/source-pull simulation-based approach; medium-power packaged device; microwave class-F power amplifier; pHEMT technology; power-added efficiency; Circuit simulation; Design methodology; Frequency; High power amplifiers; Microwave amplifiers; Packaging; Power amplifiers; Power generation; Power system harmonics; Voltage;
Conference_Titel :
Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings
Print_ISBN :
0-7803-9433-X
DOI :
10.1109/APMC.2005.1607076