Recent progress in SiC bipolar junction transistors

Author

Agarwa ; Ryu, Sei-Hyung ; Richmond, James ; Capell, Craig ; Palmour, John W. ; Balachandran, Santosh ; Chow, T. Paul ; Geif ; Bayne, Stephen ; Scozzie, Charles ; Jones, Kenneth A.

Author_Institution

Cree, Inc, Durham, NC, USA

fYear

2004

fDate

24-27 May 2004

Firstpage

361

Lastpage

364

Abstract

Bipolar junction transistors (BJT) and integrated Darlington pairs have been developed in 4H-SiC. The 3 mm x 3 mm BJTs show an on-state current of 20 A at a forward drop of 1.2 V at room temperature. The smaller 2 mm x 2 mm devices were tested up to 325 °C. The on-resistance increases and the current gain reduces with increasing temperature. The reverse leakage current was measured to be less than 40 muA at 1000 V and 325 °C. Inductive switching at 1000 V, 5 A shows extremely fast turn-on and turn-off behavior.

Keywords

bipolar transistor switches; power bipolar transistors; power semiconductor switches; silicon compounds; wide band gap semiconductors; 1.2 V; 1000 V; 20 A; 325 degC; 40 muA; 4H-SiC; 5 A; BJT; Darlington pairs; SiC; bipolar junction transistors; current gain; fast turn-off; fast turn-on; high critical electric field strength; high operating temperature; high thermal conductivity; inductive switching; on-resistance; power switching; reverse leakage current; Bipolar transistor switches; Power bipolar transistors; Power semiconductor switches; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on

Print_ISBN

4-88686-060-5

Type

conf

DOI

10.1109/ISPSD.2004.1332945

Filename

1332945