DocumentCode :
3417503
Title :
Power PiN diode model for PSPICE simulations
Author :
Buiatti, Gustavo Malagoni ; Cappelluti, Federica ; Ghione, Giovanni
Author_Institution :
Dipartimento di Elettronica, Politecnico di Torino, Turin
Volume :
3
fYear :
2005
fDate :
6-10 March 2005
Firstpage :
1911
Abstract :
An accurate physics based model for power PiN diodes is derived and implemented as a subcircuit into the PSPICE circuit simulator. The model is based on an equivalent circuit representation of the base region, obtained by solving the ambipolar diffusion equation with the finite difference method. Good agreement is obtained by comparing the results of the proposed PiN diode model with experimental and simulated results taken from the literature
Keywords :
SPICE; equivalent circuits; finite difference methods; p-i-n diodes; power engineering computing; power semiconductor diodes; PSPICE circuit simulation; ambipolar diffusion equation; equivalent circuit representation; finite difference method; power PiN diode model; Boundary conditions; Circuit simulation; Difference equations; Diodes; Equivalent circuits; Finite difference methods; Numerical models; Predictive models; SPICE; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applied Power Electronics Conference and Exposition, 2005. APEC 2005. Twentieth Annual IEEE
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-8975-1
Type :
conf
DOI :
10.1109/APEC.2005.1453314
Filename :
1453314
Link To Document :
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