A high breakdown voltage IC with lateral power device based on SODI structure

Author

Akiyama, H. ; Yasuda, N. ; Moritani, J. ; Takanashi, K. ; Majumdar, G.

Author_Institution

Adv. Technol. R&D Center, Mitsubishi Electr. Corp., Fukuoka, Japan

fYear

2004

fDate

24-27 May 2004

Firstpage

375

Lastpage

378

Abstract

A high-performance power technology has been developed, in which a conventional SOI lateral power device is merged with novel thick film technology on the backside of its substrate, such as a silicon on double insulator (SODI) structure. In addition to realizing a high breakdown voltage performance, with the assumption of 1.2 kV class applications, the SODI structure has mainly two advantages. One is that a low cost-performance of the initial SOI substrate can be achieved, because the design of the initial buried oxidation layer thickness is free. Another one is a huge reduction in the heat resistance of the power device, because a back metal electrode is formed just under the device.

Keywords

power integrated circuits; power semiconductor devices; semiconductor device breakdown; silicon-on-insulator; thermal management (packaging); thick film circuits; 1.2 kV; SODI structure; SOI lateral power device; back metal electrode; buried oxidation layer thickness; high breakdown voltage IC; power device heat resistance reduction; silicon on double insulator structure; thick film technology; Power integrated circuits; Power semiconductor devices; Silicon on insulator technology; Thick film circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on

Print_ISBN

4-88686-060-5

Type

conf

DOI

10.1109/ISPSD.2004.1332950

Filename

1332950