Title :
Schottky-barrier CNTFET and resonant transmission through it
Author :
Sharifi, M.J. ; Sanaeepur, M.
Author_Institution :
Electr. & Comput. Fac., Shahid Beheshti Univ., Tehran, Iran
Abstract :
In this paper we have completed previous works on SBCNFET and proposed a new three capacitance model. Using this new model we have calculated the energy profile in the channel. Moreover the transmission coefficient through the channel has been studied and modified relations which consider the electron coherency is proposed. Solving Poisson and Schro¿dinger equations self consistently, the validity of above mentioned issues are assessed.
Keywords :
Poisson equation; SCF calculations; Schottky barriers; Schrodinger equation; capacitance measurement; carbon nanotubes; field effect transistors; C; Poisson equations; Schottky-barrier CNTFET; Schrodinger equations; capacitance model; electron coherency; energy profile; resonant transmission; self consistent equation; transmission coefficient; Capacitance; Capacitors; Carbon nanotubes; Coaxial components; Doping; MOSFETs; Physics; Resonance; Schottky barriers; Voltage; Resonant Transmission; SBCNFET; Three capacitor model;
Conference_Titel :
Adaptive Science & Technology, 2009. ICAST 2009. 2nd International Conference on
Conference_Location :
Accra
Print_ISBN :
978-1-4244-3522-7
Electronic_ISBN :
0855-8906
DOI :
10.1109/ICASTECH.2009.5409732
