Title :
Monolithic 3D-ICs with single grain Si thin film transistors
Author :
Ishihara, Ryoichi ; Mofrad, M.R.T. ; Derakhshandeh, J. ; Golshani, Negin ; Beenakker, C.I.M.
Author_Institution :
Fac. of Electr. Eng., Math. & Comput. Sci., Delft Univ. of Technol., Delft, Netherlands
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
We review our achievement in monolithic 3D-ICs based on single-grain Si TFTs that are fabricated inside a single-grain with a low-temperature process. With pulsed-laser crystallization, Si grains with a diameter of 6 μm are successfully formed on predetermined positions. Single-grain (SG) Si TFTs are fabricated inside the single-grain with mobility for electron and holes of 600 cm2/Vs and 200 cm2/Vs, respectively. Using two layers of the SG Si TFT layers, CMOS inverter, 6T-SRAM and image sensor array with in-pixel amplifier have been fabricated.
Keywords :
crystallisation; low-temperature techniques; silicon; thin film transistors; three-dimensional integrated circuits; image sensor array; low-temperature process; monolithic 3D-IC; pulsed-laser crystallization; single grain Si thin film transistors; CMOS integrated circuits; Inverters; MOS devices; PIN photodiodes; Silicon; Thin film transistors;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467714
