A novel n-channel MOSFET featuring an integrated Schottky and no internal p-n junction

Author

Mirchandani, Ashita ; Thapar, Naresh ; Boden, Tracy ; Sodhi, Ritu ; Kinzer, Dan

Author_Institution

Int. Rectifier Corp., El Segundo, CA, USA

fYear

2004

fDate

24-27 May 2004

Firstpage

405

Lastpage

408

Abstract

This paper presents a new MOSFET structure with an integrated Schottky junction in every unit cell and with no p-n junction in the current flow path. This eliminates the injected reverse recovery charge while providing a low forward voltage drop anti-parallel Schottky diode. Gate controlled current conduction in the on-state takes place through an accumulated channel region formed along the trench sidewall. A specific on-resistance of 10.6 mΩ-mm² and 7.6 mΩ-mm² for a gate bias of 4.5 V and 10V respectively has been achieved, with a forward blocking voltage of over 30 V. This coupled with no reverse recovery charge makes the device very suitable for high frequency DC-DC converter applications.

Keywords

Schottky diodes; field effect transistor switches; leakage currents; power MOSFET; power semiconductor switches; 10 V; 30 V; 4.5 V; accumulated channel region; anti-parallel Schottky diode; fast switching; forward blocking voltage; gate bias; gate controlled current conduction; high frequency DC-DC converter; integrated recessed Schottky diode; low forward voltage drop; lower leakage currents; n-channel MOSFET; on-resistance; recessed Schottky junction; trench sidewall; unit cell; FET switches; Leakage currents; Power MOSFETs; Power semiconductor switches; Schottky diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on

Print_ISBN

4-88686-060-5

Type

conf

DOI

10.1109/ISPSD.2004.1332959

Filename

1332959