Impacts of antenna layout enhanced charging damage on MOSFET reliability and performance

The effects of antenna configuration, the electrically floating antenna and the electrically connected antenna to the substrate during plasma processing, on the charging damage of MOSFETs have been studied. The floating antenna adjacent to the gate antenna increases the degradation of both Q/sub bd/ and V/sub th/. The adjacent diode antenna significantly increases the degradation of Q/sub bd/ without increasing that of V/sub th/. The diode antenna induced damage is enhanced with an increase of electrons injected from the gate antenna to the gate oxide in the bi-directional charging during plasma processing. This phenomenon is explained by a local decrease of the antenna surface charging.