A low-power wideband transimpedance amplifier in 0.13µm CMOS

Author

Jiyoung Tak ; Hyewon Kim ; Jihye Shin ; Jinju Lee ; Jungwon Han ; Sung Min Park

Author_Institution

Dept. of Electron. Eng., Ewha Womans Univ., Seoul, South Korea

fYear

2011

fDate

24-25 Aug. 2011

Firstpage

1

Lastpage

2

Abstract

This paper presents a low-power wideband transimpedance amplifier (TIA) for the applications of multi-band wireless communication systems. Realized in a standard 0.13μm CMOS technology, the measured results of the TIA demonstrate the maximum gain of 16dB in the frequency range of 800MHz~4.3GHz, the noise figure of <; 5.88dB, the input-referred third order intercept point (IIP3) of -5.4dBm at 2.4GHz, and the power consumption of 12mW from a single 1.2V supply. The chip occupies the total area of 0.7×1.1mm².

Keywords

CMOS analogue integrated circuits; MMIC amplifiers; UHF amplifiers; field effect MMIC; integrated circuit noise; low-power electronics; operational amplifiers; CMOS technology; frequency 800 MHz to 4.3 GHz; input-referred third order intercept point; low-power wideband transimpedance amplifier; multiband wireless communication systems; noise figure; power 12 mW; size 0.13 mum; voltage 1.2 V; CMOS integrated circuits; Impedance matching; Noise measurement; Resistors; Semiconductor device measurement; Wideband; CMOS; input matching; multi-band; transimpedance amplifier; wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Intelligent Radio for Future Personal Terminals (IMWS-IRFPT), 2011 IEEE MTT-S International Microwave Workshop Series on

Conference_Location

Daejeon

Print_ISBN

978-1-4577-0961-6

Electronic_ISBN

978-1-4577-0963-0

Type

conf

DOI

10.1109/IMWS2.2011.6027202

Filename

6027202