A wide-band CMOS low noise amplifier for LTE application

Author

Hidayov, O. ; Il Hoon Jang ; Seok Kyun Han ; Sang-Gug Lee ; Cartwight, J.

Author_Institution

Dept. of Electr. Eng., Korea Adv. Inst. of Sci. (KAIST), Daejeon, South Korea

fYear

2011

fDate

24-25 Aug. 2011

Firstpage

1

Lastpage

3

Abstract

In this work, a wide band LNA for implementation in Long Term Evolution (LTE) systems is presented. A common gate amplifier with active noise cancellation is adopted to provide wide band input matching and a low noise figure (NF). To mitigate parastics and obtain improved noise performance, an inner-cascode inductor is added. The inter-cascode inductor also allows for bandwidth extension without significant peaking in the frequency response with voltage gain 17.3dB. The proposed LNA is designed in 0.18 um CMOS technology. From post-layout simulations, the design consumes 9.5 mA from a 1.8 V supply and operates in the frequency range of 0.7-2.7 GHz. The simulations also show S₁₁<;-10, a 2dB NF, and an IIP3 of approximately 5 dBm.

Keywords

CMOS analogue integrated circuits; Long Term Evolution; integrated circuit design; interference suppression; low noise amplifiers; wideband amplifiers; LTE; Long Term Evolution; active noise cancellation; common gate amplifier; current 9.5 mA; frequency 0.7 GHz to 2.7 GHz; gain 17.3 dB; inner-cascode inductor; inter-cascode inductor; noise figure 2 dB; size 0.18 mum; voltage 1.8 V; wide-band CMOS low noise amplifier; Impedance matching; Inductors; Noise; Noise measurement; Transconductance; Wideband; CMOS receiver; low noise; mobile communication; transimpedance; wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Intelligent Radio for Future Personal Terminals (IMWS-IRFPT), 2011 IEEE MTT-S International Microwave Workshop Series on

Conference_Location

Daejeon

Print_ISBN

978-1-4577-0961-6

Electronic_ISBN

978-1-4577-0963-0

Type

conf

DOI

10.1109/IMWS2.2011.6027204

Filename

6027204