Title :
Development of current-scalable emitter turn-off (ETO) thyristor module
Author :
Schmit, A. ; Chen, B. ; Zhang, B. ; Huang, A.Q.
Author_Institution :
Bradley Dept. of Electr. & Comput. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Abstract :
This paper highlights the development and experimental demonstration of an ETO module based on planar GTO technology that is well-suited to be scaled for a multitude of current requirements, with continuous current ratings from 100 A, and voltages up to 6.5 kV. Different from the previous press-pack ETO design, the new design employs an industry standard module design widely used in IGBT power devices.
Keywords :
insulated gate bipolar transistors; power bipolar transistors; thyristors; 100 A; ETO module; IGBT power devices; current-scalable emitter; turn-off thyristor module; Cathodes; Diodes; Insulated gate bipolar transistors; Negative feedback; Power electronics; Power engineering and energy; Power engineering computing; Semiconductor devices; Thyristors; Voltage;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 2005. APEC 2005. Twentieth Annual IEEE
Print_ISBN :
0-7803-8975-1
DOI :
10.1109/APEC.2005.1453334
