Title :
A new monolithic power actuator devoted to high voltage and high frequency applications [emitter-switched bipolar transistor]
Author :
Musumeci, S. ; Pagano, R. ; Raciti, Angelo
Author_Institution :
DIEES-ARIEL, Catania Univ., Italy
Abstract :
A new monolithic emitter-switching bipolar transistor (ESBT) having a good switching behavior, along with a highly performing on-state conduction characteristic, is reported. The device is the cascode connection of a high voltage bipolar transistor and a fast-switching low-voltage power MOSFET, realized inside the BJT part. The structure, which is based on a monolithic technology, has been experimentally analyzed to derive several results, particularly dwelling upon the on-state conduction characteristic and the storage time behavior of the presented device.
Keywords :
DC-DC power convertors; power MOSFET; power bipolar transistors; BJT; DC-DC converter; emitter-switching bipolar transistor; fast-switching MOSFET; high frequency ESBT; high voltage ESBT; low-voltage power MOSFET; monolithic power actuator; on-state conduction characteristics; storage time behavior; transistor switching behavior; DC-DC power conversion; Power MOSFETs; Power bipolar transistors;
Conference_Titel :
Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on
Print_ISBN :
4-88686-060-5
DOI :
10.1109/ISPSD.2004.1332972
