Title :
Testing flash memories
Author :
Mohammad, Mohammad Gh ; Saluja, Kewal K. ; Yap, Alex
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
Abstract :
Flash memories can undergo three different types of disturbances, DC-programming, DC-erasure, and drain disturbance. These faults are specific to flash memories and do not occur in RAMs. In this paper, we discuss these disturbances, their causes, and develop fault models that capture the characteristics of these faults. We present optimal and near optimal algorithms to detect these faults in flash memories
Keywords :
automatic testing; fault diagnosis; flash memories; integrated circuit testing; DC erasure disturbance; DC programming disturbance; drain disturbance; fault detection; fault models; flash memory testing; near optimal test algorithms; optimal test algorithms; Decoding; EPROM; Fault detection; Flash memory; Nonvolatile memory; Optimal control; Random access memory; Solid state circuits; Testing; Tunneling;
Conference_Titel :
VLSI Design, 2000. Thirteenth International Conference on
Conference_Location :
Calcutta
Print_ISBN :
0-7695-0487-6
DOI :
10.1109/ICVD.2000.812641
