• DocumentCode
    3418040
  • Title

    A 20mΩcm2 600 V-class superjunction MOSFET

  • Author

    Saito, Wataru ; Omura, Ichiro ; Aida, Satoshi ; Koduki, Shigeo ; Izumisawa, Masaru ; Yoshioka, Hironori ; Ogura, Tsuneo

  • Author_Institution
    Semicond. Co., Toshiba Corp., Kawasaki, Japan
  • fYear
    2004
  • fDate
    24-27 May 2004
  • Firstpage
    459
  • Lastpage
    462
  • Abstract
    Superjunction (SJ) MOSFETs with extremely low on-resistance and high avalanche withstanding capability have been designed and experimentally demonstrated. The p- and n-columns for the SJ structure are designed to reduce the on-resistance and to maximize both the breakdown voltage and the avalanche withstanding capability. The demonstrated SJ-MOSFET realized the lowest on-resistance of 20∼mΩcm2 among previously reported 600 V-class SJ-MOSFETs. The device also withstands a high avalanche current of 185-A/cm2.
  • Keywords
    avalanche breakdown; power MOSFET; semiconductor device breakdown; 600 V; 680 V; avalanche current withstanding capability; breakdown voltage; low on-resistance SJ-MOSFET; superjunction MOSFET; Avalanche breakdown; Power MOSFETs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on
  • Print_ISBN
    4-88686-060-5
  • Type

    conf

  • DOI
    10.1109/ISPSD.2004.1332977
  • Filename
    1332977
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3418040