DocumentCode
3418054
Title
Temperature characteristics of a new 100V rated power MOSFET, VLMOS (vertical LOCOS MOS)
Author
Kodama, Masahito ; Hayashi, Eiko ; Nishibe, Yuji ; Uesugi, Tsutomu
Author_Institution
Toyota Central R&D Labs. Inc., Aichi, Japan
fYear
2004
fDate
24-27 May 2004
Firstpage
463
Lastpage
466
Abstract
In this paper, we proposed a new 100 V rated power MOSFET, called "VLMOS (vertical LOCOS MOSFET)", and investigated characteristics of the VLMOS under high temperature. From simulation and experimental results, we verified that it overcame the "Si limit" and had superior temperature characteristics in specific on-resistance. This means that the VLMOS is excellent for wide-temperature range operations, especially for automotive applications.
Keywords
high-temperature electronics; oxidation; power MOSFET; 100 V; MOSFET temperature characteristics; VLMOS; automotive electronics; high temperature operation; specific on-resistance; vertical LOCOS MOSFET; wide-temperature range operations; Oxidation; Power MOSFETs;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on
Print_ISBN
4-88686-060-5
Type
conf
DOI
10.1109/ISPSD.2004.1332978
Filename
1332978
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