Title :
Optimization of LPCVD silicon nitride process in a vertical thermal reactor: use of design of experiments
Author :
Shenasa, Mohsen ; Moinpour, Mansour ; Toole, Bill O. ; Stueve, Bill ; Wilkes, Richard ; Reece, Jack ; Borror, Don ; Glarneau, J.
Author_Institution :
Nat. Semicond. Corp., Santa Clara, CA, USA
fDate :
30 Sep-1 Oct 1992
Abstract :
Process and equipment characterization of a low pressure chemical vapor deposition (LPCVD) nitride vertical thermal reactor is discussed. Film thickness uniformity for the LPCVD silicon nitride film was improved from 6.7% to 4.5%. This was achieved by implementing a systematic methodology involving as the use of gauge capability study, passive data collection and design of experiments. In addition, particle data were collected, and major sources of particle generation were identified. Both process and hardware modifications were implemented, resulting in reduced defect density
Keywords :
chemical vapour deposition; insulating thin films; semiconductor technology; silicon compounds; LPCVD; Si3N4 film; chemical vapor deposition; equipment characterization; low pressure CVD; particle data; process optimisation; vertical thermal reactor; Design optimization; Furnaces; Gases; Inductors; Manufacturing processes; Semiconductor device manufacture; Semiconductor films; Silicon; US Department of Energy; Video recording;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference and Workshop, 1992. ASMC 92 Proceedings. IEEE/SEMI 1992
Conference_Location :
Cambridge, MA
Print_ISBN :
0-7803-0740-2
DOI :
10.1109/ASMC.1992.253789
