Optimization of LPCVD silicon nitride process in a vertical thermal reactor: use of design of experiments

Author

Shenasa, Mohsen ; Moinpour, Mansour ; Toole, Bill O. ; Stueve, Bill ; Wilkes, Richard ; Reece, Jack ; Borror, Don ; Glarneau, J.

Author_Institution

Nat. Semicond. Corp., Santa Clara, CA, USA

fYear

1992

fDate

30 Sep-1 Oct 1992

Firstpage

216

Lastpage

219

Abstract

Process and equipment characterization of a low pressure chemical vapor deposition (LPCVD) nitride vertical thermal reactor is discussed. Film thickness uniformity for the LPCVD silicon nitride film was improved from 6.7% to 4.5%. This was achieved by implementing a systematic methodology involving as the use of gauge capability study, passive data collection and design of experiments. In addition, particle data were collected, and major sources of particle generation were identified. Both process and hardware modifications were implemented, resulting in reduced defect density

Keywords

chemical vapour deposition; insulating thin films; semiconductor technology; silicon compounds; LPCVD; Si₃N₄ film; chemical vapor deposition; equipment characterization; low pressure CVD; particle data; process optimisation; vertical thermal reactor; Design optimization; Furnaces; Gases; Inductors; Manufacturing processes; Semiconductor device manufacture; Semiconductor films; Silicon; US Department of Energy; Video recording;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing Conference and Workshop, 1992. ASMC 92 Proceedings. IEEE/SEMI 1992

Conference_Location

Cambridge, MA

Print_ISBN

0-7803-0740-2

Type

conf

DOI

10.1109/ASMC.1992.253789

Filename

253789