DocumentCode :
3418176
Title :
Single electron tunneling technology for neural networks
Author :
Goossens, Martijn J. ; Verhoeven, Chris J M ; Van Roermund, Arthur H M
Author_Institution :
Electron. Res. Lab., Delft Univ. of Technol., Netherlands
fYear :
1996
fDate :
12-14 Feb 1996
Firstpage :
125
Lastpage :
130
Abstract :
A new neural network hardware concept based on single electron tunneling is presented. Single electron tunneling transistors have some advantageous properties which make them very attractive to make neural networks, among which their very small size, extremely low power consumption and potentially high speed. After a brief description of the technology, the relevant properties of SET transistors are described. Simulations have been performed on some small circuits of SET transistors that exhibit functional properties similar to those required for neural networks. Finally, interconnecting the building blocks to form a neural network is analyzed
Keywords :
neural nets; single electron transistors; SET transistors; high speed operation; low power consumption; neural networks; single electron tunneling technology; Capacitors; Electronic mail; Electrons; Kelvin; Microelectronics; Neural network hardware; Neural networks; Temperature; Tunneling; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics for Neural Networks, 1996., Proceedings of Fifth International Conference on
Conference_Location :
Lausanne
ISSN :
1086-1947
Print_ISBN :
0-8186-7373-7
Type :
conf
DOI :
10.1109/MNNFS.1996.493782
Filename :
493782
Link To Document :
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