DocumentCode :
3418248
Title :
Rapid development, in a manufacturing environment, of a 1 μm triple-level metal CMOS process through the use of cross-functional teams
Author :
Comard, Matthew ; Cuéllar, Jesús
Author_Institution :
Digital Equipment Corp., Hudson, MA, USA
fYear :
1992
fDate :
30 Sep-1 Oct 1992
Firstpage :
180
Lastpage :
185
Abstract :
The development, in a manufacturing environment, of a 1 μm triple-level-metal, 5 V CMOS process in under 25 weeks is discussed. The manufacturing process engineering group developed cross-functional process integration teams that synthesized device engineering from R&D, manufacturing process engineering, production, yield engineering, product engineering, and reliability engineering. By developing the process completely within the manufacturing group and allocating key R&D expertise for device design only, these teams enabled the entire organization to come up the learning curve together, minimizing redundancy that leads to inefficient process development. Teamwork among R&D, process engineering, and production resulted in a relatively low cost, high-yield process
Keywords :
CMOS integrated circuits; integrated circuit manufacture; management; 1 micron; 5 V; CMOS process; cross-functional teams; high-yield process; low cost process; manufacturing environment; production; teamwork; triple-level metal; CMOS process; Electronic switching systems; Job shop scheduling; Manufacturing processes; Marine vehicles; Production; Research and development; Semiconductor device manufacture; Teamwork; Time to market;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Manufacturing Conference and Workshop, 1992. ASMC 92 Proceedings. IEEE/SEMI 1992
Conference_Location :
Cambridge, MA
Print_ISBN :
0-7803-0740-2
Type :
conf
DOI :
10.1109/ASMC.1992.253797
Filename :
253797
Link To Document :
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