DocumentCode :
3418274
Title :
Nanostructured silicon photo-cathodes for x-ray generation
Author :
Swanwick, M.E. ; Keathley, P.D. ; Kartner, Franz X. ; Velasquez-Garcia, L.F.
Author_Institution :
Microsyst. Technol. Labs., Massachusetts Inst. of Technol. (MIT), Cambridge, MA, USA
fYear :
2013
fDate :
8-12 July 2013
Firstpage :
1
Lastpage :
2
Abstract :
We report the fabrication and characterization of ultrafast laser triggered nanostructured silicon photo-cathodes for x-ray generation via inverse Compton scattering. A highly uniform array of ~2200 silicon pillars with 5 μm array pitch, where each pillar is capped by a nanosharp tip, shows stable current emission using 35 fs, 800 nm laser pulses. The cathodes can emit at 3.6 nA average current over 8-million 1.2 pC electron bunches when excited with 9.5 μJ laser pulses with no degradation of the emission characteristic of the cathode, showing that silicon-based photon-triggered cathodes processed with standard CMOS processes and operated at high vacuum can function for extended periods without performance degradation.
Keywords :
CMOS integrated circuits; Compton effect; nanostructured materials; particle beam bunching; photocathodes; silicon; CMOS process; Si; X-ray generation; current 3.6 nA; current emission; electron bunches; inverse Compton scattering; laser pulses; nanosharp tip; nanostructured silicon photo-cathodes; photon-triggered cathodes; silicon pillars; ultrafast laser; Arrays; CMOS process; Cathodes; Laser excitation; Measurement by laser beam; Photonics; Standards; MEMS; coherent x-ray; field emission; multiplexed; photocathode; ultrafast optics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2013 26th International
Conference_Location :
Roanoke, VA
Type :
conf
DOI :
10.1109/IVNC.2013.6624706
Filename :
6624706
Link To Document :
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