DocumentCode
3418274
Title
Nanostructured silicon photo-cathodes for x-ray generation
Author
Swanwick, M.E. ; Keathley, P.D. ; Kartner, Franz X. ; Velasquez-Garcia, L.F.
Author_Institution
Microsyst. Technol. Labs., Massachusetts Inst. of Technol. (MIT), Cambridge, MA, USA
fYear
2013
fDate
8-12 July 2013
Firstpage
1
Lastpage
2
Abstract
We report the fabrication and characterization of ultrafast laser triggered nanostructured silicon photo-cathodes for x-ray generation via inverse Compton scattering. A highly uniform array of ~2200 silicon pillars with 5 μm array pitch, where each pillar is capped by a nanosharp tip, shows stable current emission using 35 fs, 800 nm laser pulses. The cathodes can emit at 3.6 nA average current over 8-million 1.2 pC electron bunches when excited with 9.5 μJ laser pulses with no degradation of the emission characteristic of the cathode, showing that silicon-based photon-triggered cathodes processed with standard CMOS processes and operated at high vacuum can function for extended periods without performance degradation.
Keywords
CMOS integrated circuits; Compton effect; nanostructured materials; particle beam bunching; photocathodes; silicon; CMOS process; Si; X-ray generation; current 3.6 nA; current emission; electron bunches; inverse Compton scattering; laser pulses; nanosharp tip; nanostructured silicon photo-cathodes; photon-triggered cathodes; silicon pillars; ultrafast laser; Arrays; CMOS process; Cathodes; Laser excitation; Measurement by laser beam; Photonics; Standards; MEMS; coherent x-ray; field emission; multiplexed; photocathode; ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference (IVNC), 2013 26th International
Conference_Location
Roanoke, VA
Type
conf
DOI
10.1109/IVNC.2013.6624706
Filename
6624706
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