Silicon heterostructure devices for RF wireless communication

Author

Senapati, B. ; Maiti, C.K. ; Chakrabarti, N.B.

Author_Institution

Dept. of Electron. & Electr. Commun. Eng., Indian Inst. of Technol., Kharagpur, India

fYear

2000

fDate

2000

Firstpage

488

Lastpage

491

Abstract

Wireless communication of high speed data in UHF-microwave region, requires RFIC implementation of the front end for low cost consistent with high performance. The suitability of silicon based devices and circuits, in particular Si/SiGe heterostructures, is examined in this paper. Issues related to the change of technology for RFICs are considered and it is shown that scaled SiGe-HBTs satisfy the requirements of transconductance/gain, f_T/f_max and noise figure. Results of simulation of SiGe-HBT devices, amplifiers using them, and also the noise figure have been presented

Keywords

Ge-Si alloys; MMIC amplifiers; UHF amplifiers; UHF integrated circuits; bipolar MMIC; elemental semiconductors; heterojunction bipolar transistors; integrated circuit noise; semiconductor heterojunctions; semiconductor materials; silicon; MMIC amplifiers; RF wireless communication; RFIC implementation; Si-SiGe; UHF amplifiers; UHF-microwave region; heterostructure devices; noise figure; scaled HBTs; transconductance/gain; Radio frequency; Silicon; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Design, 2000. Thirteenth International Conference on

Conference_Location

Calcutta

ISSN

1063-9667

Print_ISBN

0-7695-0487-6

Type

conf

DOI

10.1109/ICVD.2000.812655

Filename

812655