Title :
Silicon heterostructure devices for RF wireless communication
Author :
Senapati, B. ; Maiti, C.K. ; Chakrabarti, N.B.
Author_Institution :
Dept. of Electron. & Electr. Commun. Eng., Indian Inst. of Technol., Kharagpur, India
Abstract :
Wireless communication of high speed data in UHF-microwave region, requires RFIC implementation of the front end for low cost consistent with high performance. The suitability of silicon based devices and circuits, in particular Si/SiGe heterostructures, is examined in this paper. Issues related to the change of technology for RFICs are considered and it is shown that scaled SiGe-HBTs satisfy the requirements of transconductance/gain, fT/fmax and noise figure. Results of simulation of SiGe-HBT devices, amplifiers using them, and also the noise figure have been presented
Keywords :
Ge-Si alloys; MMIC amplifiers; UHF amplifiers; UHF integrated circuits; bipolar MMIC; elemental semiconductors; heterojunction bipolar transistors; integrated circuit noise; semiconductor heterojunctions; semiconductor materials; silicon; MMIC amplifiers; RF wireless communication; RFIC implementation; Si-SiGe; UHF amplifiers; UHF-microwave region; heterostructure devices; noise figure; scaled HBTs; transconductance/gain; Radio frequency; Silicon; Wireless communication;
Conference_Titel :
VLSI Design, 2000. Thirteenth International Conference on
Conference_Location :
Calcutta
Print_ISBN :
0-7695-0487-6
DOI :
10.1109/ICVD.2000.812655
