A novel rectifier with low turn-on voltage utilizing three conducting mechanisms at different voltage levels

Author

Meng Zhang ; Jin Wei ; Zehong Li ; Weizhong Chen ; Min Ren ; JinPing Zhang

Author_Institution

State key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2012

fDate

Oct. 29 2012-Nov. 1 2012

Firstpage

1

Lastpage

3

Abstract

A novel rectifier with low turn-on voltage is proposed using depletion effects of both the surface Schottky junctions and the buried PN junctions to control the conducting channel, thus to rectify the current. At different forward voltage levels, this novel rectifier works in three different conducting modes. Moreover, by proper design, reverse breakdown voltage determined by avalanche in PN junction and reverse recovery characteristics analogous to Schottky barrier diode can be realized.

Keywords

Schottky diodes; power semiconductor diodes; Schottky barrier diode; buried PN junctions; conducting channel control; conducting mechanisms; depletion effects; forward voltage levels; low-turn-on voltage; rectifier; reverse breakdown voltage; reverse recovery characteristics; surface Schottky junctions; Anodes; Breakdown voltage; Junctions; Rectifiers; Schottky barriers; Schottky diodes; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on

Conference_Location

Xi´an

Print_ISBN

978-1-4673-2474-8

Type

conf

DOI

10.1109/ICSICT.2012.6467748

Filename

6467748