Title :
Convergence issues in resonant tunneling diode circuit simulation
Author :
Bhattacharya, Mayukh ; Mazumder, Pinaki
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
Due to its status as the fastest switching semiconductor device and its bistable nature, the resonant tunneling diode (RTD) is considered to be one of the most promising devices for future-generation high-performance VLSI systems. However, popular circuit simulators, such as SPICE, can encounter direct current (DC) and transient convergence problems while simulating RTD-based circuits because of the negative differential resistance (NDR) in the device´s current-voltage characteristics. In this paper, we study the nature of these convergence problems and provide several solution techniques that can be easily incorporated into SPICE-like circuit simulators
Keywords :
VLSI; circuit simulation; digital integrated circuits; integrated circuit design; negative resistance; resonant tunnelling diodes; semiconductor device models; transients; DC problems; SPICE-like circuit simulators; bistable nature; circuit simulation; current-voltage characteristics; future-generation high-performance VLSI systems; negative differential resistance; resonant tunneling diode circuit; transient convergence problems; Analytical models; Circuit simulation; Convergence; HEMTs; Integrated circuit interconnections; MODFETs; Physics; Resonant tunneling devices; SPICE; Semiconductor diodes;
Conference_Titel :
VLSI Design, 2000. Thirteenth International Conference on
Conference_Location :
Calcutta
Print_ISBN :
0-7695-0487-6
DOI :
10.1109/ICVD.2000.812657
