• DocumentCode
    3418380
  • Title

    Properties of PZT thin films as a function of in-plane biaxial stress

  • Author

    Shepard, J.F., Jr ; Trolier-McKinstry, S. ; Hendrickson, Mary A. ; Zeto, Robert

  • Author_Institution
    Intercoll. Mater. Res. Lab., Pennsylvania State Univ., University Park, PA, USA
  • Volume
    1
  • fYear
    1996
  • fDate
    18-21 Aug 1996
  • Firstpage
    161
  • Abstract
    The properties of lead zirconate titanate (PZT) thin films were characterized as a function of in-plane biaxial stress. Typical values of Pr and Ec for unstressed (i.e. no applied load) sol-gel films were measured using Pt/PZT/Pt/Ti/SiO2/Si test capacitors and are on the order of 28 μC/cm2 and 63 kV/cm, respectively, Residual stresses in PZT/electrode stacks were found to be a function of the annealing condition for the Pt/Ti bottom electrode. Measured values of Pt/Ti stress for sputtered films consisting of 150 nm Pt and 20 nm Ti varied with temperature from -386 MPa in the as-received state to 718 MPa after heating to 700°C. Experimental stress states (of test capacitors) were modified from the fabricated condition in a biaxial stress rig designed to provide uniform tensile or compressive load over the surface of a 3" substrate. The resulting applied stress state in the films ranged from -142 MPa to 212 MPa. Remnant polarization, coercive field strengths, capacitance, and tan δ were then measured in situ and correlated to the state of stress in the PZT film
  • Keywords
    annealing; capacitance; dielectric hysteresis; dielectric losses; dielectric polarisation; ferroelectric thin films; internal stresses; lead compounds; piezoceramics; sol-gel processing; 3 inch; 700 C; PZT thin films; PZT/electrode stacks; Pt-PZT-Pt-Ti-SiO2-Si; Pt-PbZrO3TiO3-Pt-Ti-SiO2-Si; Pt/PZT/Pt/Ti/SiO2/Si test capacitors; Pt/Ti bottom electrode; annealing condition; capacitance; coercive field strength; hysteresis loops; in-plane biaxial stress; remanent polarization; residual stresses; sol-gel films; tan δ; temperature variation; uniform compressive load; uniform tensile load; Capacitors; Compressive stress; Electrodes; Residual stresses; Semiconductor films; Stress measurement; Tensile stress; Testing; Titanium compounds; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on
  • Conference_Location
    East Brunswick, NJ
  • Print_ISBN
    0-7803-3355-1
  • Type

    conf

  • DOI
    10.1109/ISAF.1996.602728
  • Filename
    602728