Title :
Properties of PZT thin films as a function of in-plane biaxial stress
Author :
Shepard, J.F., Jr ; Trolier-McKinstry, S. ; Hendrickson, Mary A. ; Zeto, Robert
Author_Institution :
Intercoll. Mater. Res. Lab., Pennsylvania State Univ., University Park, PA, USA
Abstract :
The properties of lead zirconate titanate (PZT) thin films were characterized as a function of in-plane biaxial stress. Typical values of Pr and Ec for unstressed (i.e. no applied load) sol-gel films were measured using Pt/PZT/Pt/Ti/SiO2/Si test capacitors and are on the order of 28 μC/cm2 and 63 kV/cm, respectively, Residual stresses in PZT/electrode stacks were found to be a function of the annealing condition for the Pt/Ti bottom electrode. Measured values of Pt/Ti stress for sputtered films consisting of 150 nm Pt and 20 nm Ti varied with temperature from -386 MPa in the as-received state to 718 MPa after heating to 700°C. Experimental stress states (of test capacitors) were modified from the fabricated condition in a biaxial stress rig designed to provide uniform tensile or compressive load over the surface of a 3" substrate. The resulting applied stress state in the films ranged from -142 MPa to 212 MPa. Remnant polarization, coercive field strengths, capacitance, and tan δ were then measured in situ and correlated to the state of stress in the PZT film
Keywords :
annealing; capacitance; dielectric hysteresis; dielectric losses; dielectric polarisation; ferroelectric thin films; internal stresses; lead compounds; piezoceramics; sol-gel processing; 3 inch; 700 C; PZT thin films; PZT/electrode stacks; Pt-PZT-Pt-Ti-SiO2-Si; Pt-PbZrO3TiO3-Pt-Ti-SiO2-Si; Pt/PZT/Pt/Ti/SiO2/Si test capacitors; Pt/Ti bottom electrode; annealing condition; capacitance; coercive field strength; hysteresis loops; in-plane biaxial stress; remanent polarization; residual stresses; sol-gel films; tan δ; temperature variation; uniform compressive load; uniform tensile load; Capacitors; Compressive stress; Electrodes; Residual stresses; Semiconductor films; Stress measurement; Tensile stress; Testing; Titanium compounds; Transistors;
Conference_Titel :
Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on
Conference_Location :
East Brunswick, NJ
Print_ISBN :
0-7803-3355-1
DOI :
10.1109/ISAF.1996.602728