Title :
High speed Si/SiGe and Ge/SiGe MODFETs
Author :
Aniel, F. ; Enciso-Aguilar, M. ; Zerounian, N. ; Crozat, P. ; Adde, R. ; Hackbarth, T. ; Herzog, J.-H. ; Konig, U.
Author_Institution :
Inst. of Electron., Paris-South Univ., Orsay, France
Abstract :
The high frequency and noise performances of n- and p-SiGe based MODFETs are reviewed. Their excellent HF and low noise behavior makes them well suited for RF mobile communications. We discuss their physical modeling, design optimization and self-heating effects.
Keywords :
Ge-Si alloys; UHF field effect transistors; high electron mobility transistors; semiconductor device models; semiconductor device noise; Ge-SiGe; MODFETs; RF mobile communications; Si-SiGe; design optimization; high frequency performances; noise performances; physical modeling; self-heating effects; Capacitance; Circuit noise; Design optimization; Frequency; Germanium silicon alloys; HEMTs; MODFETs; Scattering parameters; Silicon germanium; Substrates;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. 2003 Topical Meeting on
Conference_Location :
Grainau, Germany
Print_ISBN :
0-7803-7787-7
DOI :
10.1109/SMIC.2003.1196661
