Title :
Operating SOI CMOS technology in extreme environments
Author :
Ying Li ; Guofu Niu ; Cressler, J.D. ; Patel, J. ; Liu, M. ; Reed, R.A. ; Mojarradi, M.M. ; Blalock, B.J.
Author_Institution :
Electr. & Comput. Eng. Dept., Auburn Univ., Montgomery, AL, USA
Abstract :
Partially-depleted SOI CMOS devices fabricated in a 0.35 /spl mu/m technology on UNIBOND material were evaluated for electronics applications requiring robust operation under extreme environment conditions consisting of: low and/or high temperatures, and under substantial radiation exposure. The threshold voltage and effective mobility were determined across temperature for SOI CMOS. The radiation response was characterized using threshold voltage shifts of both the front-gate and back-gate transistors. These results suggest that this 0.35 /spl mu/m partially-depleted SOI CMOS technology Is suitable for operation across a wide range of extreme environment conditions consisting of: cryogenic temperatures down to 86 K, elevated temperatures up to 573 K, and under radiation exposure to 1.3 Mrad(Si) total dose.
Keywords :
CMOS integrated circuits; high-temperature electronics; integrated circuit technology; radiation hardening (electronics); silicon-on-insulator; 0.35 micron; 1.3 Mrad; 86 to 563 K; SOI CMOS technology; Si; UNIBOND material; cryogenic temperatures; effective mobility; extreme environments; high temperatures; partially-depleted technology; radiation exposure; radiation response; threshold voltage; CMOS technology; Cryogenics; Extraterrestrial measurements; Probes; Protons; Robustness; Space missions; Space technology; Temperature distribution; Threshold voltage;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. 2003 Topical Meeting on
Conference_Location :
Grainau, Germany
Print_ISBN :
0-7803-7787-7
DOI :
10.1109/SMIC.2003.1196663
