Title :
Simulation of current density — Voltage characteristics of poly[9,9-di-(2´-ethylhexyl)fluorenyl-2,7-diyl] based light emitting diode
Author :
Qiushu Zhang ; Di Li
Author_Institution :
Sch. of Mechatron. Eng., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
In this paper, we model a pristine polyfluorene based light emitting diode by using space charge limited current theory. Polymer light emitting diode device was manufactured with the configuration of ITO/ PEDOT:PSS/polyfluorene/Al. The light emitting polymer thin film layer was poly[9,9-di-(2´-ethylhexyl) fluorenyl-2,7-diyl] (PF2/6). Poole-Frenkel expression for field dependence of the hole mobility is used. The simulation result is in good agreement with the experiment for bias voltages above 2.6 V.
Keywords :
current density; light emitting diodes; polymers; thin film devices; ITO/PEDOT:PSS/polyfluorene/Al; Poole-Frenkel expression; current density-voltage characteristics; field dependence; hole mobility; light emitting polymer thin film layer; poly[9,9-di-(2´-ethylhexyl)fluorenyl-2,7-diyl]; polymer light emitting diode device; pristine polyfluorene; space charge limited current theory; Electric fields; Indium tin oxide; Light emitting diodes; Physics; Polymers; Space charge; Voltage measurement;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467761
