Title :
Optimized metalization processing for improved manufacturability
Author :
Chowdhury, Vijay ; Harper, Guy ; Song, S. L Steven ; Brugge, Hunter B.
Author_Institution :
VLSI Technol. Inc., San Jose, CA, USA
fDate :
30 Sep-1 Oct 1992
Abstract :
Improvements brought about in 1.0-μm and 1.5-μm production CMOS processes through modifications in the metalization process are discussed. The standard metalization process consists of dry via etching with a bottom Ti-W thickness of 2200 Å deposited in the same pump-down as the Al film (no air exposure of bottom Ti-W). In the modified process, via etching is wet/dry and the bottom Ti-W thickness is reduced to 1700 Å and exposed to air before deposition of Al-1% Cu film. These modifications have brought about significant improvements in the reliability and yield of the process. Improvements were observed consistently at two different fabrication sites
Keywords :
CMOS integrated circuits; aluminium alloys; circuit reliability; copper alloys; etching; integrated circuit technology; metallisation; titanium; tungsten; 1.0 micron; 1.5 micron; 1700 AA; AlCu-Ti-W; CMOS processes; fabrication sites; manufacturability; metalization processing; reliability; via etching; yield; CMOS process; CMOS technology; Electromigration; Grain size; Leakage current; Manufacturing processes; Measurement standards; Production systems; Very large scale integration; Wet etching;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference and Workshop, 1992. ASMC 92 Proceedings. IEEE/SEMI 1992
Conference_Location :
Cambridge, MA
Print_ISBN :
0-7803-0740-2
DOI :
10.1109/ASMC.1992.253840
