• DocumentCode
    3418708
  • Title

    Self-aligned, gated field emitter arrays with integrated high-aspect-ratio current limiters

  • Author

    Guerrera, Stephen A. ; Akinwande, Akintunde Ibitayo

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Massachusetts Inst. of Technol., Cambridge, MA, USA
  • fYear
    2013
  • fDate
    8-12 July 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We report the fabrication of arrays of silicon field emitters with 1-micron pitch with integrated, self-aligned extractor gates and 10-micron tall high-aspect-ratio silicon vertical current limiters.
  • Keywords
    current limiters; elemental semiconductors; field emitter arrays; silicon; gated field emitter arrays; integrated high-aspect-ratio current limiters; self-aligned extractor gates; silicon vertical current limiters; Cathodes; Current limiters; Etching; Fabrication; Field emitter arrays; Logic gates; Silicon; Field Emitter Arrays; Silicon; Vertical Current Limiters; Vertical Ungated Field-Effect Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Nanoelectronics Conference (IVNC), 2013 26th International
  • Conference_Location
    Roanoke, VA
  • Type

    conf

  • DOI
    10.1109/IVNC.2013.6624726
  • Filename
    6624726
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3418708