Geometry-dependent low-frequency noise variations in 120 GHz f/sub T/ SiGe HBTs

Author

Johansen, J.A. ; Zhenrong Jin ; Cressler, J.D. ; Joseph, A.J.

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

fYear

2003

fDate

11-11 April 2003

Firstpage

57

Lastpage

59

Abstract

The influence of aggressive geometrical scaling on the variation of low-frequency noise in 120 GHz peak f/sub T/ UHV/CVD SiGe HBTs is presented for the first time. The noise variation shows a strong dependence on transistor geometry and little dependence on bias conditions. Our previous noise theory is used to understand this behavior, and a comparison is made between these new results and our prior results on 90 GHz peak f/sub T/ generation SiGe technology.

Keywords

Ge-Si alloys; heterojunction bipolar transistors; millimetre wave bipolar transistors; semiconductor device noise; semiconductor materials; 120 GHz; LF noise variations; MM-wave HBT; SiGe; SiGe HBTs; UHV/CVD SiGe; bias conditions; geometrical scaling; geometry-dependent noise variations; low-frequency noise variations; transistor geometry; Current density; Frequency dependence; Geometry; Germanium silicon alloys; Heterojunction bipolar transistors; Low-frequency noise; Noise figure; Noise measurement; Noise shaping; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. 2003 Topical Meeting on

Conference_Location

Grainau, Germany

Print_ISBN

0-7803-7787-7

Type

conf

DOI

10.1109/SMIC.2003.1196668

Filename

1196668