Title :
A new fourth-order Gm-C CMOS polyphase filter for Low-IF receiver
Author :
Shan Liu ; Bo Wang ; Jin-Peng Shen ; Xin-an Wang ; Ru Huang
Author_Institution :
Shenzhen Grad. Sch., Peking Univ., Shenzhen, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
A new CMOS Gm-C polyphase filter for Low-IF receiver is presented. As the linearity of the Gm-C polyphase filter is determined by the transconductor amplifier, a highly linear transconductor amplifier is designed. A novel Gm-C polyphase filter topology is proposed to reduce the die area. The center frequency of the novel 4th order Gm-C polyphase filter is 2.5MHz with the bandwidth of 3.6MHz. Designed in 90nm standard CMOS process; the polyphase filter occupies only 0.0465mm2. Consuming 1.02mA from a 2.4V voltage, the polyphase filter achieves a voltage gain of 6.85dB at the pass-band and an image rejection of 31.5dB at -2.5MHz.
Keywords :
CMOS analogue integrated circuits; amplifiers; band-pass filters; bandwidth allocation; radio receivers; Gm-C polyphase filter topology; bandwidth; bandwidth 3.6 MHz; center frequency; current 1.02 mA; die area; fourth-order Gm-C CMOS polyphase filter; frequency 2.5 MHz; gain 6.85 dB; image rejection; linear transconductor amplifier; low-IF receiver; pass-band; size 90 nm; standard CMOS process; voltage 2.4 V; voltage gain; Band pass filters; Filtering theory; Low pass filters; Maximum likelihood detection; Microwave filters; Nonlinear filters; Receivers;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467766
