Title :
A SiGe active sub-harmonic receiver front-end for 5-6 GHz wireless applications
Author :
Svitek, R. ; Raman, S.
Author_Institution :
Bradley Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Abstract :
A silicon germanium (IBM 5HP technology) RF front-end for direct-conversion receiver applications has been designed, fabricated, and tested. The front-end is intended for use in the U.S. 5-6 GHz Unlicensed National Information Infrastructure (U-NII) bands. The front-end is composed of an LNA, I and Q x2 sub-harmonic mixers (SHMs), and an LO conditioning chain. The receiver is completely differential and is designed for operation from a 3.3 V supply. The current consumption is /spl sim/6 mA for the LNA and /spl sim/5 mA for each mixer. Measured receiver performance (with LNA) shows 18-20 dB conversion gain in the lower two U-NII bands, -16 dBm input compression point, and >10 dB return loss across all three U-NII bands.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; MMIC amplifiers; MMIC mixers; microwave links; radio receivers; semiconductor materials; 10 dB; 18 to 20 dB; 3.3 V; 5 mA; 5 to 6 GHz; 6 mA; IBM 5HP technology; LNA; LO conditioning chain; RF front-end; SiGe; SiGe BiCMOS process; SiGe active receiver front-end; U-NII bands; differential receiver; direct-conversion receiver applications; sub-harmonic mixers; sub-harmonic receiver front-end; wireless applications; CMOS technology; Circuits; Gain measurement; Germanium silicon alloys; Image converters; Packaging; Radio frequency; Silicon germanium; Testing; Voltage;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. 2003 Topical Meeting on
Conference_Location :
Grainau, Germany
Print_ISBN :
0-7803-7787-7
DOI :
10.1109/SMIC.2003.1196670
