A hybrid fabricated 40 GHz low phase noise SiGe push-push oscillator

Author

Wanner, R. ; Olbrich, G.R.

Author_Institution

Lehrstuhl fur Hochfrequenztechnik, Technische Univ. Munchen, Germany

fYear

2003

fDate

11-11 April 2003

Firstpage

72

Lastpage

75

Abstract

We present a 40 GHz push-push oscillator based on SiGe HBTs. The circuit is fabricated in thin film technology on an alumina substrate. It provides an output power of -9 dBm at 40 GHz and two differential outputs with -6 dBm each at the fundamental frequency of 20 GHz. The oscillator shows an excellent phase noise performance and reaches -108 dBc/Hz at the second harmonic frequency of 40 GHz and -114 dBc/Hz at the fundamental frequency of 20 GHz Both values are measured at an offset frequency of I MHz.

Keywords

alumina; heterojunction bipolar transistors; hybrid integrated circuits; integrated circuit design; integrated circuit noise; millimetre wave integrated circuits; millimetre wave oscillators; phase noise; thin film circuits; 20 GHz; 40 GHz; Al/sub 2/O/sub 3/; EHF; MM-wave oscillator; SiGe; SiGe HBTs; alumina substrate; design procedure; hybrid fabricated oscillator; low phase noise oscillator; push-push oscillator; thin film technology; Frequency measurement; Germanium silicon alloys; Noise measurement; Oscillators; Phase measurement; Phase noise; Power generation; Silicon germanium; Substrates; Thin film circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. 2003 Topical Meeting on

Conference_Location

Grainau, Germany

Print_ISBN

0-7803-7787-7

Type

conf

DOI

10.1109/SMIC.2003.1196672

Filename

1196672