• DocumentCode
    3418831
  • Title

    Cold cathode array coated with cubic boron nitride

  • Author

    Kobayashi, Masato ; Miyashita, Hiroaki ; Ono, Takahito

  • Author_Institution
    Grad. Sch. of Eng., Tohoku Univ., Sendai, Japan
  • fYear
    2013
  • fDate
    8-12 July 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A thin film of boron nitride is synthesized on a Si substrate using BCl3 and NH3 as source gases, by thermal chemical vapor deposition. Cubic boron nitride (c-BN) is preferentially synthesized using a Fe thin film. The c-BN film exhibits negative electron affinity. A gated silicon field emitter array coated with a c-BN thin film for multi electron beam lithography is developed. Large emission current can be achieved in BN-coated Si emitter.
  • Keywords
    CVD coatings; ammonia; boron compounds; cathodes; electron affinity; electron beam lithography; field emitter arrays; iron; semiconductor thin films; silicon; BCl3; BN; Fe; Si; coated emitter; cold cathode array; cubic boron nitride; emission current; gated silicon field emitter array; multielectron beam lithography; negative electron affinity; source gases; substrate; thermal chemical vapor deposition; thin film; Anodes; Films; c-BN; chemical vapor deposition; cubic boron nitride; field emission; multi electron beam lithography;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Nanoelectronics Conference (IVNC), 2013 26th International
  • Conference_Location
    Roanoke, VA
  • Type

    conf

  • DOI
    10.1109/IVNC.2013.6624730
  • Filename
    6624730
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3418831