Title :
Cold cathode array coated with cubic boron nitride
Author :
Kobayashi, Masato ; Miyashita, Hiroaki ; Ono, Takahito
Author_Institution :
Grad. Sch. of Eng., Tohoku Univ., Sendai, Japan
Abstract :
A thin film of boron nitride is synthesized on a Si substrate using BCl3 and NH3 as source gases, by thermal chemical vapor deposition. Cubic boron nitride (c-BN) is preferentially synthesized using a Fe thin film. The c-BN film exhibits negative electron affinity. A gated silicon field emitter array coated with a c-BN thin film for multi electron beam lithography is developed. Large emission current can be achieved in BN-coated Si emitter.
Keywords :
CVD coatings; ammonia; boron compounds; cathodes; electron affinity; electron beam lithography; field emitter arrays; iron; semiconductor thin films; silicon; BCl3; BN; Fe; Si; coated emitter; cold cathode array; cubic boron nitride; emission current; gated silicon field emitter array; multielectron beam lithography; negative electron affinity; source gases; substrate; thermal chemical vapor deposition; thin film; Anodes; Films; c-BN; chemical vapor deposition; cubic boron nitride; field emission; multi electron beam lithography;
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2013 26th International
Conference_Location :
Roanoke, VA
DOI :
10.1109/IVNC.2013.6624730
