A switched-LNA in 0.18 /spl mu/m CMOS for Bluetooth applications

Author

Krug, F. ; Russer, P. ; Beffa, F. ; Bachtold, W. ; Lott, U.

Author_Institution

Lehrstuhl fur Hochfrequenztechnik, Technische Univ. Munchen, Germany

fYear

2003

fDate

11-11 April 2003

Firstpage

80

Lastpage

83

Abstract

A 2.45 GHz switched low-noise amplifier (LNA), intended for use in an integrated Bluetooth receiver, was implemented in a standard 0.18 /spl mu/m CMOS process. The LNA is optimized for a fully integrated mixer stage, with a mixer-input capacitance of 150 fF. The amplifier provides a switchable gain (|S/sub 21/|/sup 2/) of 7 dB/-17 dB with a noise figure (NF) of 3 dB in a 50 /spl Omega/ measurement environment. The power consumption is 7.6 mW from a 1.8 V supply. The die area of the LNA is 0.79 mm/sup 2/.

Keywords

Bluetooth; CMOS analogue integrated circuits; UHF amplifiers; UHF integrated circuits; radio receivers; switched networks; 0.18 micron; 1.8 V; 150 fF; 2.45 GHz; 3 dB; 7.6 mW; Bluetooth applications; CMOS process; RF CMOS technology; fully integrated mixer stage; integrated Bluetooth receiver; low-noise amplifier; switched-LNA; Bluetooth; CMOS process; CMOS technology; Dielectrics; Energy consumption; Integrated circuit interconnections; Low-noise amplifiers; Noise measurement; Radio frequency; Telecommunication switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. 2003 Topical Meeting on

Conference_Location

Grainau, Germany

Print_ISBN

0-7803-7787-7

Type

conf

DOI

10.1109/SMIC.2003.1196674

Filename

1196674