DocumentCode :
3419250
Title :
An estimation of the application possibility at THz regime for PP-VME diode and triode
Author :
Liu, G.Y. ; Xia, S.H. ; Chen, B.X. ; Li, H.Y.
Author_Institution :
IECAS, Beijing, China
fYear :
2013
fDate :
8-12 July 2013
Firstpage :
1
Lastpage :
2
Abstract :
On the basis of summation and generalization of previous electron transit time function relations for the PP-VME diode and triode, calculated mathematically the typical value of the electron transit time at the Thz regime for those devices, by using of the method of an equivalent PP-VME diode, approximately calculated a typical value of the electron transit time at the Thz regime for the PP-VME triode too, from calculated results, the PP-VME diode and triode is in prospect of application at THz regime.
Keywords :
submillimetre wave diodes; terahertz wave devices; triodes; vacuum microelectronics; PP-VME diode; PP-VME triode; THz regime; application possibility estimation; electron transit time function relations; planar parallel vacuum microelectronics diode; Cathodes; Integrated circuits; Physics; Presses; electron transit time; planar parallel vacuum microelectronics diode (pp-VME diode); space charge;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2013 26th International
Conference_Location :
Roanoke, VA
Type :
conf
DOI :
10.1109/IVNC.2013.6624749
Filename :
6624749
Link To Document :
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