RF-MEMS filters manufactured on silicon: key facts about bulk-acoustic-wave technology

Author

Aigner, R.

Author_Institution

Infineon Technol. AG, Munich, Germany

fYear

2003

fDate

11-11 April 2003

Firstpage

157

Lastpage

161

Abstract

The working principle and performance of state-of-the-art Bulk-Acoustic-Wave (BAW) devices is reviewed. The importance for RF-filters in mobile phone applications is discussed and the benefit of silicon-based technologies highlighted. Challenges in manufacturing of BAWs are briefly reviewed. The most important performance parameters such as resonator bandwidth and Q-values - and their dependency on processing and design are described. Whether monolithic integration "System-On-Chip" together with RFICs or hybrid integration "System-In-Package" makes more sense is discussed. Examples of state-of-the-art in BAW filters in production and ramp-up status are presented.

Keywords

Q-factor; acoustic resonator filters; bulk acoustic wave devices; elemental semiconductors; hybrid integrated circuits; micromechanical resonators; passive filters; radiofrequency filters; radiofrequency integrated circuits; silicon; system-on-chip; BAW filters; BAW technology; Q-values; RF-MEMS filters; RFICs; SOP; Si; SoC; bulk-acoustic-wave technology; hybrid integration; mobile phone applications; monolithic integration; performance parameters; resonator bandwidth; system-in-package; Bandwidth; Filters; Manufacturing; Mobile handsets; Monolithic integrated circuits; Process design; Radiofrequency integrated circuits; Radiofrequency microelectromechanical systems; Silicon; System-on-a-chip;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. 2003 Topical Meeting on

Conference_Location

Grainau, Germany

Print_ISBN

0-7803-7787-7

Type

conf

DOI

10.1109/SMIC.2003.1196694

Filename

1196694