Title :
The applicability of VBIC and Agilent model on InP DHBTs
Author :
Jin-Can Zhang ; Yu-Ming Zhang ; Hong-Liang Lu ; Yi-Men Zhang ; Hai-Peng Zhang
Author_Institution :
Key Lab. of Wide Band-Gap Semicond. Mater. & Devices, Xidian Univ., Xi´an, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
In this paper the modeling results for a given InGaAs/InP DHBTs technology (1×15μm2 emitter area) have been shown with two advanced compact models, VBIC and Agilent model. Shortcomings of these models have been pointed out and an improved model to overcome these shortcomings has been discussed.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device models; Agilent model; DHBT technology; InGaAs-InP; VBIC; compact model; double heterojunction bipolar transistor; emitter area; Current measurement; Double heterojunction bipolar transistors; Educational institutions; Indium gallium arsenide; Indium phosphide; Photonic band gap; Semiconductor device modeling;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467792
